Method of fabricating dual PCRAM cells sharing a common electrode

ABSTRACT

Two PCRAM cells which use a common anode between them are disclosed. The two memory cells can be accessed separately to store two bits of data which can be read and written, and can be stacked one over the other with a common anode between them to form an upper and lower cell pair. Respective access transistors are provided for the cells and arranged to permit reading and writing of the cells.

FIELD OF THE INVENTION

The present invention relates to a PCRAM device which utilizes achalcogenide glass memory cell to store a memory state. Moreparticularly, the invention relates to a way of fabricating memory cellsin a PCRAM memory device to increase packing density.

BACKGROUND OF THE INVENTION

Recently chalcogenide glasses fabricated as fast ion conductors havebeen investigated as data storage memory cells for use in memorydevices, such as DRAM memory devices. U.S. Pat. Nos. 5,761,115,5,896,312, 5,914,893, and 6,084,796 all describe this technology and areincorporated herein by reference. The storage cells are calledprogrammable metallization cells, also known as PCRAM cells. Onecharacteristic of such a cell is that it typically includes a fast ionconductor such as a chalcogenide metal ion and a cathode and anodespaced apart on a surface of the fast ion conductor. Application of avoltage across the cathode and anode causes growth of a non-volatilemetal dendrite which changes the resistance and capacitance of the cellwhich can then be used to store data.

For this technology to be used on a mass scale in memory devices it isnecessary to fabricate large numbers of memory cells in a relativelysmall amount of integrated surface area.

SUMMARY OF THE INVENTION

The present invention provides a fabrication process and resultingstructure which stacks at least two programmable metallization cellsvertically in an integrated circuit. The cells can be accessedindividually to provide vertical storage of two data bits in a givenarea of the integrated circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages of the invention willbecome more apparent from the detailed description of the exemplaryembodiments of the invention given below with reference to theaccompanying drawings in which:

FIG. 1 shows early steps in the fabrication of a PCRAM cell of thepresent invention;

FIG. 2 shows the fabrication steps for a PCRAM cell of the presentinvention subsequent to those shown in FIG. 1;

FIG. 3 shows fabrication steps for the PCRAM cell of the presentinvention subsequent to those shown in FIG. 2;

FIG. 4 shows fabrication steps for the PCRAM cell of the presentinvention subsequent to those shown in FIG. 3;

FIG. 5 shows fabrication steps for the PCRAM cell of the presentinvention subsequent to those shown in FIG. 4;

FIG. 6 shows fabrication steps for the PCRAM cell of the presentinvention subsequent to those shown in FIG. 5;

FIG. 7 illustrates an exemplary PCRAM cell accessing circuit;

FIG. 8 shows how the present invention is incorporated into a computer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention provides two stacked PCRAM cells which use acommon anode located between them. The two stacked memory cells can beaccessed separately to store two bits of data which can be read andwritten. In an exemplary embodiment, the two memory cells are stackedone over the other with a common anode between them to form an upper andlower cell pair. Respective access transistors are provided for thecells and arranged to permit reading and writing of the cells.

FIG. 1 shows a substrate 11 having a doped well over which the memorycells are formed. The substrate can be formed of any semiconductormaterial with silicon being exemplary. The substrate 11 has fabricatedthereon a plurality of gate stacks, two of which (13 b and 13 c) arepart of MOSFET access transistors 15 a and 15 b for lower memory cellsof the stacked pairs of cells. Transistors 15 a and 15 b have associatedsource/drain doped regions 17 a, 17 b, and 17 c. The gate stacks eachcontain an oxide layer, e.g. a silicon oxide layer 21, in contact withsubstrate 11, a conductor layer 23 formed of, for example, polysilicon,a conductive silicon layer 25 and a cap insulating layer 27 formed of,for example, silicon nitride. Insulating sidewall spacers 29 of, forexample, silicon nitride are also provided. The material composition ofthe various layers and sidewalls of the gate stacks is not critical asother well known materials used to form the components of a transistorgate stack may also be used.

As noted, FIG. 1 illustrates the early stages of the fabrication of apair of stacked memory cells in accordance with the present invention,which begins at the point where three polysilicon plugs 29 a, 29 b, and29 c have been formed between gate stacks 13 a-13 b, 13 b-13 c, and 13c-13 d. The outer gate stacks 13 a and 13 d are adjacent rowlines forother access areas in the memory array, located on top of fieldisolation areas 100. Additionally, FIG. 1 shows multilayer cathodes 104formed on plugs 29 a and 29 c. The cathodes 104 are formed using acomposite conductive layered stack such as a two layer stack, forexample, of tungsten nitride (Wn) and tungsten (W) which are blanketdeposited and then patterned by CMP and/or etching. The two layer stackcan also be made of other conductive materials such as platinum (Pt),titanium (Ti), cobalt (Co), aluminum (Al) and nickel (Ni).

As shown in FIG. 2, an insulator layer 106 of, e.g. silicon nitride(Si₃N₄) is formed over the FIG. 1 structure and is patterned to formholes 108 over each cathode 104. A layer of chalcogenide glass is nextdeposited over the FIG. 2 structure and planarized, as shown in FIG. 3,leaving areas of chalcogenide material 105 over the cathodes 104. Thechalcogenide glass may be formed as an Ag/Ge₃Se₇ material, or otherchalcogenide glass compositions which have a fast ion conductor and arecapable of growing a dendrite in the presence of an applied voltage.Alternatively, other glass materials responsive to applied voltages towrite and send information can also be used.

Another insulating layer 112 of, for example, silicon nitride is thenformed over the FIG. 3 structure, and is patterned to form openings overthe chalcogenide glass areas. An Ag/W/Ag conductive stack 110, forexample, is then formed in the openings, as shown in FIG. 4. Thisconductive stack combination serves as an anode 110 for the lower memorycell 118 formed by the cathode 104, chalcogenide glass 105, and anode110, and serves as the anode for an upper memory cell, the formation ofwhich is described below. The Ag/W/Ag stack 110 may be fabricated acrossa memory cell array. Electrical connections to the stacks 110 can bemade at the periphery contact holes of a memory cell array.

In the next stage of fabrication, show in FIG. 5, another insulatinglayer 124, for example, silicon nitride, is deposited and patterned toform holes 126 over the anodes 110. A silver and chalcogenide glasslayer 129 is then deposited with the holes 126 and planarized. As withlayer 105, the chalcogenide glass may be formed as an Ag/Ge₃Se₇material, or other chalcogenized glass compositions, which are capableof focusing a conductive path in the presence of an applied voltage orother glass compositions which can be used to write or read data mayalso be used. As also shown in FIG. 6, another insulating layer 131 isdeposited and patterned to form holes and a conductor 130, such astungsten, is then deposited in the holes in contact with chalcogenideglass layer 129. A layer of tungsten 130 b is also deposited in a holeprovided in layer 131 over polysilicon plug 29 b. The tungstenelectrodes 130 a serve as cathodes 132 for the upper chalcogenide glassmemory cell 120 formed by common anode 110 and chalcogenide layer 129.Unlike cathodes 104, cathodes 132 are formed solely from tungsten.Additional fabrication steps can now be used to connect cathodes 132 torespective access transistors similar to transistors 15 a, 15 b andformed elsewhere in the memory cell array.

FIG. 7 shows a simplified electrical schematic diagram of the upper andlower memory cells 118, 120 as incorporated within a memory cell array308. Lower memory cell 118 and upper memory cell 120 are each connectedto respective access transistors 118 _(AT) and 120 _(AT). The transistor118 _(AT) of FIG. 7 corresponds to the access transistor 15 a of FIG. 1.Transistor 120 _(AT) is a similar access transistor fabricated in thememory array, preferably close to the access transistor 118 _(AT).

The specific binary values stored within the memory cells 118, 120 ofthe present invention is determined by respective sense amplifiers 159,180. As shown in FIG. 7, the PCRAM system of the present inventionlocates those sense amplifiers 159 and 180 in the periphery of thememory array of the present invention. Using memory cell 118 as anexample, a sense amplifier 159 has one input tied to the common anode110, and the other input tied to the access transistor 118 _(AT) devicethrough a column line A through a transistor 150. The access transistor118 _(AT) is connected to a wordline and allows charge to move from thememory cell 118 to the sense amplifier 159 when both row and columnsassociated with cells 118, 120 are selected, and the lower cell 118 isselected. As an alternative to being tied to common anode 110, the input158 of sense amplifier 159 can instead be tied to a reference signalwhich may be another inactive column line.

Each memory cell pair 118, 120 within the memory array 308 is selectedby row and column address signals as is well known in the memory art. Tothis end, FIG. 7 shows a row decoder 201 and a column decoder 203, whichare used to select a row and column associated with a cell pair 118,120. However, it is still necessary to determine whether the upper orlower member of a cell pair is being addressed. Thus a third decoder,termed a grid decoder, is used to select one of several of the lower 118and upper 120 memory cells for operation. Accordingly, a grid decoder170, shown in FIG. 7, designates whether an upper or lower cell is beingaddressed. Depending on which of two grid addresses is specified thegrid decoder 170 will activate a selected word line for transistor 118_(AT) or 120 _(AT).

The process of reading a memory cell is accomplished by sensing theresistance value of each memory cell, since the storage of a 1 in amemory cell causes the resistance of the dendrite to be significantlylarger than if a 0 is stored therein. By observing the output of the twosense amplifiers 159 and 180, all four binary conditions (00, 01, 10,11) of the cell pairs can be determined.

Again referring to FIG. 7, when the access transistor 118 _(AT) turnson, a sub-write threshold voltage is supplied to the cell 118. If thecell 118 is in a ‘zero’ state, a very small current will flow based onthe intrinsic resistance of the non written cell, and the senseamplifiers will register a “no current” condition with respect to areference. If a ‘one’ has been written to the cell, a much largercurrent will flow, which will be detected by sense amplifier 159. Analternative to the current differential sense amplifier 159 describedabove is the use of a voltage detector for sense amplifiers 159, 180.

Although FIG. 7 shows access transistor 120 _(AT) connecting the uppermemory cell 120 to a column line B, separate from column line A, sincethe memory cells 118, 120 are never accessed at the same time, accesstransistors can also be configured to couple the upper memory cell 120to column line A. The use of a separate column line B for the uppermemory cell 120, however, would enable both cells to be accessed at thesame time to simultaneously store and retrieve two bits of data. In sucha case the grid decoder can be omitted.

FIG. 8 is a block diagram of a processor-based system 300 utilizing aPCRAM memory cell and array constructed in accordance with the inventionas incorporated within a PCRAM memory device 308. The processor-basedsystem 300 may be a computer system, a process control system or anyother system employing a processor and associated memory. The system 300includes a central processing unit (CPU) 302, e.g., a microprocessor,that communicates with the PCRAM memory device 308 and an I/O device 304over a bus 320. It must be noted that the bus 320 may be a series ofbuses and bridges commonly used in a processor-based system, but forconvenience purposes only, the bus 320 has been illustrated as a singlebus. A second I/O device 306 is illustrated, but is not necessary topractice the invention. The processor-based system 300 also includesread-only memory (ROM) 310 and may include peripheral devices such as afloppy disk drive 312 and a compact disk (CD) ROM drive 314 that alsocommunicates with the CPU 302 over the bus 320 as is well known in theart. The CPU 302 and PCRAM memory device 308 also may be fabricated onthe same chip.

While the invention has been described and illustrated with reference tospecific exemplary embodiments, it should be understood that manymodifications and substitutions can be made without departing from thespirit and scope of the invention. Accordingly, the invention is not tobe considered as limited by the foregoing description but is onlylimited by the scope of the appended claims.

What is claimed as new and desired to be protected by Letters Patent of the United States is:
 1. A method of fabricating a memory device comprising: forming a first memory cell comprising a resistance-changeable chalcogenide glass material between and electrically coupled to a first electrode and a second electrode; and forming a second memory cell comprising a resistance-changeable chalcogenide glass material between and electrically coupled to said second electrode and a third electrode; wherein said second electrode comprises a first silver layer, a tungsten layer over said first silver layer, and a second silver layer over said tungsten layer.
 2. A method as in claim 1, wherein said first and third electrodes each comprise a layer of tungsten and a layer of tungsten nitride.
 3. A method as in claim 1, wherein each of said first and third electrodes comprises at least one layer of tungsten, platinum, titanium, cobalt, aluminum, or nickel.
 4. A method as in claim 1, wherein said first electrode, said second electrode, and said third electrode are each electrically coupled to a voltage source or to a read circuit.
 5. A method as in claim 1, wherein said first and second memory cells are coupled to different column lines by respective first and second access transistors.
 6. A method as in claim 1, wherein said chalcogenide glass material of said first and second memory cells comprises germanium selenide.
 7. A method as in claim 6, wherein said germanium selenide has the formula Ge_(x)Se_(1-x))+Ag.
 8. A method as in claim 1 further comprising vertically stacking said first memory cell and said second memory cell.
 9. A method as in claim 8 further comprising: forming said stacked first and second memory cells over a conductive plug such that said first electrode of said first memory cell is electrically coupled to said conductive plug.
 10. A method as in claim 8 further comprising: forming a first row line conductor to control current flow between a first column line and said first electrode; forming a second row line conductor to control current flow between a second column line and said third electrode; and forming a sense amplifier circuit electrically coupled to said second electrode.
 11. A method as in claim 1, wherein said first and second memory cells are electrically coupled to a single column line by respective first and second access transistors.
 12. A method as in claim 11 further comprising forming a circuit for operating said first and second access transistors to individually access each of said first and second memory cells.
 13. A method as in claim 11 further comprising forming a circuit for operating said first and second access transistors to access both said first and second memory cells simultaneously.
 14. A method of forming a memory device comprising: forming a first electrode, said first electrode comprising a material selected from the group consisting of tungsten, tungsten nitride, platinum, titanium, cobalt, aluminum, and nickel; forming a first germanium selenide layer over and electrically coupled said first electrode; incorporating a first silver-containing material into said first germanium selenide layer; forming a first silver layer over and electrically coupled to said first germanium seleinde layer; forming a tungsten layer over and electrically coupled to said first silver layer; forming a second silver layer over and electrically coupled to said tungsten layer; forming a second germanium selenide layer over and electrically coupled to said second silver layer; incorporating a second silver-containing material into said second germanium selenide layer; and forming a second electrode over and electrically coupled to said second germanium selenide layer, said second electrode comprising a material selected from the group consisting of tungsten, tungsten nitride, platinum, titanium, cobalt, aluminum, and nickel.
 15. A method of fabricating a memory device comprising: forming a first memory cell comprising a resistance-changeable chalcogenide glass material between and electrically coupled to a first electrode and a second electrode; forming a second memory cell comprising a resistance-changeable chalcogenide glass material between and electrically coupled to said second electrode and a third electrode; providing a first access circuit for said first memory cell, said first access circuit comprising a first column line, a first row line, and a first access transistor having a gate coupled to said first row line and configured to electrically couple said first electrode to said first column line; and providing a second address circuit for said second memory cell, said second address circuit comprising a second column line, a second row line, and a second access transistor having a gate coupled to said second row line and configured to electrically couple said third electrode to said second column line.
 16. The method of claim 15, further comprising providing a sense amplifier circuit electrically coupled to said second electrode.
 17. The method of claim 15, further comprising providing a first sense amplifier circuit electrically coupled to said first column line and a second sense amplifier circuit electrically coupled to said second column line.
 18. The method of claim 17, further comprising: providing a third transistor between said first column line and said first sense amplifier circuit; and providing a fourth transistor between said second column line and said second sense amplifier circuit. 